Self-powered photo diodes based on Ga2O3/n-GaAs structures

Self-powered photo diodes based on Ga2O3/n-GaAs structures

The electrical and photovoltaic characteristics of the Ga2O3/n-GaAs structures have been studied. A gallium oxide film was obtained by HF magnetron sputtering on n-GaAs epitaxial layers with concentration of N_d=9.5·1014 cm-3. The thickness of the oxide film was 120 nm. Measurements at a frequency o...

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Bibliographic Details
Published in:Semiconductors Vol. 56, № 9. P. 707-711
Other Authors: Kalygina, Vera M., Kiselyeva, O. S., Kushnarev, Bogdan O., Oleinik, Vladimir L., Petrova, Julianna S., Tsymbalov, Alexander V.
Format: Article
Language:English
Subjects:
МДП-структуры
вольт-фарадные характеристики
пленки оксида галлия
фотоэлектрические характеристики
фотодиоды
статьи в журналах
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