Effect of dopants on laser-induced damage threshold of ZnGeP2
The effect of doping Mg, Se, and Ca by diffusion into ZnGeP2 on the optical damage threshold at a wavelength of 2.1 μm has been studied. It has been shown that diffusion-doping with Mg and Se leads to an increase in the laser-induced damage threshold (LIDT) of a single crystal (monocrystal), ZnGeP2;...
| Опубликовано в: : | Crystals Vol. 13, № 3. P. 440 (1-9) |
|---|---|
| Другие авторы: | Yudin, Nikolay N., Zinoviev, Mikhail M., Kuznetsov, Vladimir S., Slyunko, Elena S., Podzyvalov, Sergey N., Voevodin, Vladimir I., Lysenko, Alexey, Kalsin, Andrey, Shaimerdenova, Leyla K., Baalbaki, Houssain A., Kalygina, Vera M. |
| Формат: | Статья в журнале |
| Язык: | English |
| Предметы: | |
| Online-ссылка: | http://vital.lib.tsu.ru/vital/access/manager/Repository/koha:001016520 |
Похожие документы
- Laser-induced damage threshold of single crystal ZnGeP2 at 2.1 µm: the effect of crystal lattice quality at various pulse widths and repetition rates
- Influence of postgrowth processing technology on the laser induced damage threshold of ZnGeP2 single crystal
- Laser-induced damage threshold of ZnGeP2 crystal for (sub)picosecond 1-μm laser pulse
- The influence of angstrom-scale roughness on the laser-induced damage threshold of single-crystal ZnGeP2
- Effects of the processing technology of CVD-ZnSe, Cr2+:ZnSe, and Fe2+:ZnSe polycrystalline optical elements on the damage threshold induced by a repetitively pulsed laser at 2.1 μm
