Effect of Si+ ion implantation in α-Ga2O3 films on their gas sensitivity

The effect of the Si+ ion implantation on the gas-sensing properties of single-crystal (0001) α-Ga2O3 films grown by halide vapor phase epitaxy (HVPE) has been studied. It is established that irradiation with a dose of 8 × 1012– 8 × 1015 cm−2 at an energy of 100 keV followed by postimplantation anne...

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Bibliographic Details

Published in:	IEEE sensors journal Vol. 23, № 3. P. 1885-1895
Other Authors:	Yakovlev, Nikita N., Almaev, Aleksei V., Butenko, Pavel N., Tetelbaum, David, Mikhaylov, Alexey, Nikolskaya, Alena, Pechnikov, Aleksei I., Stepanov, Sergey I., Boiko, Mikhail, Chikiryaka, Andrei V., Nikolaev, Vladimir I.
Format:	Article
Language:	English
Subjects:	газовая чувствительность газофазная эпитаксия галогениды ионная имплантация статьи в журналах
Online Access:	http://vital.lib.tsu.ru/vital/access/manager/Repository/koha:001016730