Effect of Si+ ion implantation in α-Ga2O3 films on their gas sensitivity

Effect of Si+ ion implantation in α-Ga2O3 films on their gas sensitivity

The effect of the Si+ ion implantation on the gas-sensing properties of single-crystal (0001) α-Ga2O3 films grown by halide vapor phase epitaxy (HVPE) has been studied. It is established that irradiation with a dose of 8 × 1012– 8 × 1015 cm−2 at an energy of 100 keV followed by postimplantation anne...

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Bibliographic Details
Published in:IEEE sensors journal Vol. 23, № 3. P. 1885-1895
Other Authors: Yakovlev, Nikita N., Almaev, Aleksei V., Butenko, Pavel N., Tetelbaum, David, Mikhaylov, Alexey, Nikolskaya, Alena, Pechnikov, Aleksei I., Stepanov, Sergey I., Boiko, Mikhail, Chikiryaka, Andrei V., Nikolaev, Vladimir I.
Format: Article
Language:English
Subjects:
газовая чувствительность
газофазная эпитаксия
галогениды
ионная имплантация
статьи в журналах
Online Access:http://vital.lib.tsu.ru/vital/access/manager/Repository/koha:001016730
Description
Summary:The effect of the Si+ ion implantation on the gas-sensing properties of single-crystal (0001) α-Ga2O3 films grown by halide vapor phase epitaxy (HVPE) has been studied. It is established that irradiation with a dose of 8 × 1012– 8 × 1015 cm−2 at an energy of 100 keV followed by postimplantation annealing increases the response of α-Ga2O3 films to 3 vol% of H2 by 43 times at 400 ◦C, reduces the response time by a factor of 6, and expands the operating temperature range down to 30 ◦C. In addition, α-Ga2O3 layers irradiated with a Si+ ion dose of 8 × 1013–8 × 1015 cm−2 demonstrate high sensitivity to CO and NH3 gases. The mechanism of Si+ ion irradiationeffect on the gas-sensingproperties of α-Ga2O3 structures is proposed.
Bibliography:Библиогр.: 52 назв.
ISSN:1530-437X

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