Effect of Si+ ion implantation in α-Ga2O3 films on their gas sensitivity
The effect of the Si+ ion implantation on the gas-sensing properties of single-crystal (0001) α-Ga2O3 films grown by halide vapor phase epitaxy (HVPE) has been studied. It is established that irradiation with a dose of 8 × 1012- 8 × 1015 cm−2 at an energy of 100 keV followed by postimplantation anne...
| Published in: | IEEE sensors journal Vol. 23, № 3. P. 1885-1895 |
|---|---|
| Other Authors: | , , , , , , , , , , |
| Format: | Article |
| Language: | English |
| Subjects: | |
| Online Access: | http://vital.lib.tsu.ru/vital/access/manager/Repository/koha:001016730 Перейти в каталог НБ ТГУ |
| LEADER | 02463nab a2200457 c 4500 | ||
|---|---|---|---|
| 001 | koha001016730 | ||
| 005 | 20231227193807.0 | ||
| 007 | cr | | ||
| 008 | 231225|2023 xxu s a eng d | ||
| 024 | 7 | |a 10.1109/JSEN.2022.3229707 |2 doi | |
| 035 | |a koha001016730 | ||
| 040 | |a RU-ToGU |b rus |c RU-ToGU | ||
| 245 | 1 | 0 | |a Effect of Si+ ion implantation in α-Ga2O3 films on their gas sensitivity |c N. N. Yakovlev, A. V. Almaev, P. N. Butenko [et al.] |
| 336 | |a Текст | ||
| 337 | |a электронный | ||
| 504 | |a Библиогр.: 52 назв. | ||
| 520 | 3 | |a The effect of the Si+ ion implantation on the gas-sensing properties of single-crystal (0001) α-Ga2O3 films grown by halide vapor phase epitaxy (HVPE) has been studied. It is established that irradiation with a dose of 8 × 1012- 8 × 1015 cm−2 at an energy of 100 keV followed by postimplantation annealing increases the response of α-Ga2O3 films to 3 vol% of H2 by 43 times at 400 ◦C, reduces the response time by a factor of 6, and expands the operating temperature range down to 30 ◦C. In addition, α-Ga2O3 layers irradiated with a Si+ ion dose of 8 × 1013-8 × 1015 cm−2 demonstrate high sensitivity to CO and NH3 gases. The mechanism of Si+ ion irradiationeffect on the gas-sensingproperties of α-Ga2O3 structures is proposed. | |
| 653 | |a газовая чувствительность | ||
| 653 | |a газофазная эпитаксия | ||
| 653 | |a галогениды | ||
| 653 | |a ионная имплантация | ||
| 655 | 4 | |a статьи в журналах |9 917802 | |
| 700 | 1 | |a Yakovlev, Nikita N. |9 802458 | |
| 700 | 1 | |a Almaev, Aleksei V. |9 407941 | |
| 700 | 1 | |a Butenko, Pavel N. |9 876423 | |
| 700 | 1 | |a Tetelbaum, David |9 807501 | |
| 700 | 1 | |a Mikhaylov, Alexey |9 807500 | |
| 700 | 1 | |a Nikolskaya, Alena |9 807490 | |
| 700 | 1 | |a Pechnikov, Aleksei I. |9 802462 | |
| 700 | 1 | |a Stepanov, Sergey I. |9 802461 | |
| 700 | 1 | |a Boiko, Mikhail |9 917803 | |
| 700 | 1 | |a Chikiryaka, Andrei V. |9 878330 | |
| 700 | 1 | |a Nikolaev, Vladimir I. |9 802460 | |
| 773 | 0 | |t IEEE sensors journal |d 2023 |g Vol. 23, № 3. P. 1885-1895 |x 1530-437X | |
| 852 | 4 | |a RU-ToGU | |
| 856 | 4 | |u http://vital.lib.tsu.ru/vital/access/manager/Repository/koha:001016730 | |
| 856 | |y Перейти в каталог НБ ТГУ |u https://koha.lib.tsu.ru/cgi-bin/koha/opac-detail.pl?biblionumber=1016730 | ||
| 908 | |a статья | ||
| 942 | |2 udc | ||
| 039 | |b 100 | ||
| 999 | |c 1016730 |d 1016730 | ||