Solar-blind ultraviolet detectors based on high-quality HVPE α-Ga2O3 films with giant responsivity
The MSM structures based on high-quality 1.6- μm -thick α -gallium oxide (Ga2O3) films grown by the halide vapor phase epitaxy with Ti/Ni interdigital contacts were developed for the detection of short-wave ultraviolet (UVC) radiation. The spectral dependences of responsivity, external quantum effic...
Published in: | IEEE sensors journal Vol. 23, № 17. P. 19245-19255 |
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Other Authors: | , , , , , , , , , , , |
Format: | Article |
Language: | English |
Subjects: | |
Online Access: | http://vital.lib.tsu.ru/vital/access/manager/Repository/koha:001132768 Перейти в каталог НБ ТГУ |
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024 | 7 | |a 10.1109/JSEN.2023.3297127 |2 doi | |
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245 | 1 | 0 | |a Solar-blind ultraviolet detectors based on high-quality HVPE α-Ga2O3 films with giant responsivity |c A. V. Almaev, V. I. Nikolaev, V. V. Kopyev [et al.] |
336 | |a Текст | ||
337 | |a электронный | ||
504 | |a Библиогр.: 58 назв. | ||
520 | 3 | |a The MSM structures based on high-quality 1.6- μm -thick α -gallium oxide (Ga2O3) films grown by the halide vapor phase epitaxy with Ti/Ni interdigital contacts were developed for the detection of short-wave ultraviolet (UVC) radiation. The spectral dependences of responsivity, external quantum efficiency (EQE), and detectivity of MSM structures based on α -Ga2O3 were studied in the wavelength range of 205-260 nm. The responsivity, the EQE, and the detectivity are 7.19×104 A ×W−1 , 3.79×105 arb.un., and 1.12×1018 Hz 0.5× cm ×W−1 , respectively, for structures with an interelectrode distance of 30 μm at an applied voltage of 10 V and exposure to radiation with a wavelength of 235 nm. The high values of the photoelectric characteristics were caused by the manifestation of an internal gain of the photoresponse due to the self-localization of holes in α -Ga2O3. The prospects of researches to develop UVC radiation detectors for wireless UVC communication were shown. | |
653 | |a оксид галлия | ||
653 | |a солнечно-слепые детекторы УФ-излучения | ||
653 | |a фотоэлектрические характеристики | ||
655 | 4 | |a статьи в журналах |9 956551 | |
700 | 1 | |a Almaev, Aleksei V. |9 407941 | |
700 | 1 | |a Nikolaev, Vladimir I. |9 802460 | |
700 | 1 | |a Kopyev, Viktor V. |9 114994 | |
700 | 1 | |a Shapenkov, Sevastian |9 811516 | |
700 | 1 | |a Yakovlev, Nikita N. |9 802458 | |
700 | 1 | |a Kushnarev, Bogdan O. |9 802463 | |
700 | 1 | |a Pechnikov, Aleksei I. |9 802462 | |
700 | 1 | |a Deng, Jinxiang |9 956548 | |
700 | 1 | |a Izaak, Tatyana I. |9 90127 | |
700 | 1 | |a Chikiryaka, Andrei V. |9 878330 | |
700 | 1 | |a Scheglov, Mikhail P. |9 811517 | |
700 | 1 | |a Zarichny, Anton |9 956552 | |
773 | 0 | |t IEEE sensors journal |d 2023 |g Vol. 23, № 17. P. 19245-19255 |x 1530-437X | |
852 | 4 | |a RU-ToGU | |
856 | 4 | |u http://vital.lib.tsu.ru/vital/access/manager/Repository/koha:001132768 | |
856 | |y Перейти в каталог НБ ТГУ |u https://koha.lib.tsu.ru/cgi-bin/koha/opac-detail.pl?biblionumber=1132768 | ||
908 | |a статья | ||
999 | |c 1132768 |d 1132768 | ||
039 | |b 100 |