Solar-blind ultraviolet detectors based on high-quality HVPE α-Ga2O3 films with giant responsivity

The MSM structures based on high-quality 1.6- μm -thick α -gallium oxide (Ga2O3) films grown by the halide vapor phase epitaxy with Ti/Ni interdigital contacts were developed for the detection of short-wave ultraviolet (UVC) radiation. The spectral dependences of responsivity, external quantum effic...

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Published in:IEEE sensors journal Vol. 23, № 17. P. 19245-19255
Other Authors: Almaev, Aleksei V., Nikolaev, Vladimir I., Kopyev, Viktor V., Shapenkov, Sevastian, Yakovlev, Nikita N., Kushnarev, Bogdan O., Pechnikov, Aleksei I., Deng, Jinxiang, Izaak, Tatyana I., Chikiryaka, Andrei V., Scheglov, Mikhail P., Zarichny, Anton
Format: Article
Language:English
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Online Access:http://vital.lib.tsu.ru/vital/access/manager/Repository/koha:001132768
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245 1 0 |a Solar-blind ultraviolet detectors based on high-quality HVPE α-Ga2O3 films with giant responsivity  |c A. V. Almaev, V. I. Nikolaev, V. V. Kopyev [et al.] 
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520 3 |a The MSM structures based on high-quality 1.6- μm -thick α -gallium oxide (Ga2O3) films grown by the halide vapor phase epitaxy with Ti/Ni interdigital contacts were developed for the detection of short-wave ultraviolet (UVC) radiation. The spectral dependences of responsivity, external quantum efficiency (EQE), and detectivity of MSM structures based on α -Ga2O3 were studied in the wavelength range of 205-260 nm. The responsivity, the EQE, and the detectivity are 7.19×104 A ×W−1 , 3.79×105 arb.un., and 1.12×1018 Hz 0.5× cm ×W−1 , respectively, for structures with an interelectrode distance of 30 μm at an applied voltage of 10 V and exposure to radiation with a wavelength of 235 nm. The high values of the photoelectric characteristics were caused by the manifestation of an internal gain of the photoresponse due to the self-localization of holes in α -Ga2O3. The prospects of researches to develop UVC radiation detectors for wireless UVC communication were shown. 
653 |a оксид галлия 
653 |a солнечно-слепые детекторы УФ-излучения 
653 |a фотоэлектрические характеристики 
655 4 |a статьи в журналах  |9 956551 
700 1 |a Almaev, Aleksei V.  |9 407941 
700 1 |a Nikolaev, Vladimir I.  |9 802460 
700 1 |a Kopyev, Viktor V.  |9 114994 
700 1 |a Shapenkov, Sevastian  |9 811516 
700 1 |a Yakovlev, Nikita N.  |9 802458 
700 1 |a Kushnarev, Bogdan O.  |9 802463 
700 1 |a Pechnikov, Aleksei I.  |9 802462 
700 1 |a Deng, Jinxiang  |9 956548 
700 1 |a Izaak, Tatyana I.  |9 90127 
700 1 |a Chikiryaka, Andrei V.  |9 878330 
700 1 |a Scheglov, Mikhail P.  |9 811517 
700 1 |a Zarichny, Anton  |9 956552 
773 0 |t IEEE sensors journal  |d 2023  |g Vol. 23, № 17. P. 19245-19255  |x 1530-437X 
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