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240404|2023 xxu s a eng d |
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|a 10.1109/JSEN.2023.3297127
|2 doi
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|a koha001132768
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|a RU-ToGU
|b rus
|c RU-ToGU
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|a Solar-blind ultraviolet detectors based on high-quality HVPE α-Ga2O3 films with giant responsivity
|c A. V. Almaev, V. I. Nikolaev, V. V. Kopyev [et al.]
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|a Текст
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|a электронный
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|a Библиогр.: 58 назв.
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|a The MSM structures based on high-quality 1.6- μm -thick α -gallium oxide (Ga2O3) films grown by the halide vapor phase epitaxy with Ti/Ni interdigital contacts were developed for the detection of short-wave ultraviolet (UVC) radiation. The spectral dependences of responsivity, external quantum efficiency (EQE), and detectivity of MSM structures based on α -Ga2O3 were studied in the wavelength range of 205–260 nm. The responsivity, the EQE, and the detectivity are 7.19×104 A ×W−1 , 3.79×105 arb.un., and 1.12×1018 Hz 0.5× cm ×W−1 , respectively, for structures with an interelectrode distance of 30 μm at an applied voltage of 10 V and exposure to radiation with a wavelength of 235 nm. The high values of the photoelectric characteristics were caused by the manifestation of an internal gain of the photoresponse due to the self-localization of holes in α -Ga2O3. The prospects of researches to develop UVC radiation detectors for wireless UVC communication were shown.
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|a оксид галлия
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|a солнечно-слепые детекторы УФ-излучения
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|a фотоэлектрические характеристики
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|a статьи в журналах
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|a Almaev, Aleksei V.
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|a Nikolaev, Vladimir I.
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|a Kopyev, Viktor V.
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1 |
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|a Shapenkov, Sevastian
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|a Yakovlev, Nikita N.
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|a Kushnarev, Bogdan O.
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|a Pechnikov, Aleksei I.
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|a Deng, Jinxiang
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|a Izaak, Tatyana I.
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|a Chikiryaka, Andrei V.
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|a Scheglov, Mikhail P.
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|a Zarichny, Anton
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|t IEEE sensors journal
|d 2023
|g Vol. 23, № 17. P. 19245-19255
|x 1530-437X
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|a RU-ToGU
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|u http://vital.lib.tsu.ru/vital/access/manager/Repository/koha:001132768
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|a статья
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|c 1132768
|d 1132768
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