Dynamics of vacancy formation and distribution in semiconductor heterostructures: Effect of thermally generated intrinsic electrons

The effect of thermally generated equilibrium carrier distribution on the vacancy generation, recombination, and mobility in a semiconductor heterostructure with an undoped quantum well is studied. A different rate of thermally generated equilibrium carriers in layers with different band gaps at ann...

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Bibliographic Details

Published in:	Nanomaterials Vol. 13, № 2. P. 308 (1-21)
Other Authors:	Shamirzaev, Timur S., Atuchin, Victor V., Zhilitskiy, Vladimir E., Gornov, Alexander Yu
Format:	Article
Language:	English
Subjects:	полупроводниковые гетероструктуры вакансионная диффузия квантовые ямы статьи в журналах
Online Access:	http://vital.lib.tsu.ru/vital/access/manager/Repository/koha:001133161 Перейти в каталог НБ ТГУ