High oxygen sensitivity of TiO2 thin films deposited by ALD

The gas sensitivity and structural properties of TiO2 thin films deposited by plasma-enhanced atomic layer deposition (ALD) were examined in detail. The TiO2 thin films are deposited using Tetrakis(dimethylamido)titanium(IV) and oxygen plasma at 300 °C on SiO2 substrates followed by annealing at tem...

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Bibliographic Details
Published in:Micromachines Vol. 14, № 10. P. 1875 (1-14)
Other Authors: Almaev, Aleksei V., Yakovlev, Nikita N., Almaev, Dmitry A., Verkholetov, Maksim G., Rudakov, Grigory A., Litvinova, Kristina I.
Format: Article
Language:English
Subjects:
Online Access:http://vital.lib.tsu.ru/vital/access/manager/Repository/koha:001139587
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