High oxygen sensitivity of TiO2 thin films deposited by ALD
The gas sensitivity and structural properties of TiO2 thin films deposited by plasma-enhanced atomic layer deposition (ALD) were examined in detail. The TiO2 thin films are deposited using Tetrakis(dimethylamido)titanium(IV) and oxygen plasma at 300 °C on SiO2 substrates followed by annealing at tem...
Published in: | Micromachines Vol. 14, № 10. P. 1875 (1-14) |
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Other Authors: | , , , , , |
Format: | Article |
Language: | English |
Subjects: | |
Online Access: | http://vital.lib.tsu.ru/vital/access/manager/Repository/koha:001139587 Перейти в каталог НБ ТГУ |