Optical absorption, photocarrier recombination dynamics and terahertz dielectric properties of electron-irradiated GaSe crystals

Optical absorption spectra of 9 MeV electron-irradiated GaSe crystals were studied. Two absorption bands with the low-photon-energy threshold at 1.35 and 1.73 eV (T = 300 K) appeared in the transparency region of GaSe after the high-energy-electron irradiation. The observed absorption bands were att...

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Bibliographic Details

Published in:	Crystals Vol. 13, № 11. P. 1562 (1-18)
Other Authors:	Bereznaya, Svetlana A., Redkin, Ruslan A., Brudnyi, Valentin N., Sarkisov, Yuri S., Su, Xinyang, Sarkisov, Sergey Yu
Format:	Article
Language:	English
Subjects:	радиационные дефекты диэлектрическая проницаемость сечение фотоионизации фотопроводимость фотовозбуждение оптическая накачка статьи в журналах
Online Access:	http://vital.lib.tsu.ru/vital/access/manager/Repository/koha:001139653 Перейти в каталог НБ ТГУ