APA (7th ed.) Citation

Khludkov, S. S., Tolbanov, O. P., Vilisova, M. D., Prudaev, I. A., & Tyazhev, A. V. (2024). Semiconductor devices based on gallium arsenide with deep impurity centers. TSU Press.

Chicago Style (17th ed.) Citation

Khludkov, Stanislav S., Oleg P. Tolbanov, Marija Dmitrievna Vilisova, Ilya A. Prudaev, and Anton V. Tyazhev. Semiconductor Devices Based on Gallium Arsenide with Deep Impurity Centers. Tomsk: TSU Press, 2024.

MLA (8th ed.) Citation

Khludkov, Stanislav S., et al. Semiconductor Devices Based on Gallium Arsenide with Deep Impurity Centers. TSU Press, 2024.