Semiconductor devices based on gallium arsenide with deep impurity centers
The monograph is generalization of the results of extensive research into structures and devices based on gallium arsenide with deep impurity centers carried out in Tomsk State University, the Siberian Institute for Physics and Technology and the Scientific Research Institute of Semiconductor Device...
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| Other Authors: | , , , , |
| Format: | eBook |
| Language: | English |
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Tomsk
TSU Press
2024
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| Subjects: | |
| Online Access: | http://vital.lib.tsu.ru/vital/access/manager/Repository/koha:001144896 Перейти в каталог НБ ТГУ |
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| 245 | 1 | 0 | |a Semiconductor devices based on gallium arsenide with deep impurity centers |c S. S. Khludkov, O. P. Tolbanov, M. D. Vilisova [a. o.] ; edited by O.P. Tolbanov ; National Research Tomsk State University |
| 260 | |a Tomsk |b TSU Press |c 2024 |9 755204 | ||
| 300 | |a 251 p. |b ill. | ||
| 336 | |a Текст | ||
| 337 | |a разные средства доступа | ||
| 504 | |a Bibliogr.: p. 221-248 | ||
| 520 | 3 | |a The monograph is generalization of the results of extensive research into structures and devices based on gallium arsenide with deep impurity centers carried out in Tomsk State University, the Siberian Institute for Physics and Technology and the Scientific Research Institute of Semiconductor Devices. Methods of doping GaAs with the impurities of the transition metals of Fe, Cr, Mn are presented and the GaAs properties are described. Much attention is given to the analysis of the electron processes in the complex structures based on the above material. The characteristics of a number of developed devices such as switching avalanche S-diodes, UV and IR photodetectors, ionizing radiation detectors and generators of rectangular and high-power delta pulses are presented. The prospects of using GaAs doped with transition metals in spintronics are considered. | |
| 653 | |a арсенид галлия легированный | ||
| 653 | |a примеси переходных металлов | ||
| 653 | |a легирование полупроводников примесное | ||
| 653 | |a легирование полупроводников диффузионное | ||
| 653 | |a легирование эпитаксиальных слоев | ||
| 653 | |a арсенида галлия π-v-n-структуры | ||
| 653 | |a S-диоды лавинные переключающие | ||
| 653 | |a детекторы ионизирующих излучений | ||
| 653 | |a фотоприемники многоэлементные УФ диапазона | ||
| 653 | |a фоторезисторные приемники ИК-излучения | ||
| 653 | |a генераторы терагерцевого диапазона | ||
| 653 | |a арсенида галлия высокоомные слои | ||
| 653 | |a пассивация интегральных схем | ||
| 653 | |a арсенид галлия легированный марганцем | ||
| 653 | |a арсенид галлия легированный железом | ||
| 653 | |a арсенид галлия ферромагнитный | ||
| 653 | |a гетероструктуры арсенида галлия ферромагнитного | ||
| 653 | |a полупроводники ферромагнитные | ||
| 653 | |a спинтроника, материалы | ||
| 653 | |a генераторы дельта-импульсов | ||
| 653 | |a электронные структуры арсенида галлия | ||
| 655 | 4 | |a монографии |9 972505 | |
| 700 | 1 | |a Khludkov, Stanislav S. |9 439488 | |
| 700 | 1 | |a Tolbanov, Oleg P. |4 edt |9 95834 | |
| 700 | 1 | |a Vilisova, Marija Dmitrievna |9 972506 | |
| 700 | 1 | |a Prudaev, Ilya A. |9 99979 | |
| 700 | 1 | |a Tyazhev, Anton V. |9 95833 | |
| 710 | 2 | |a Tomsk State University |9 66047 | |
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