Investigation of the bimodal character of RHEED intensity oscillations during homoepitaxial growth of Si/Si(100)
This paper presents a study of the bimodal character of the intensity oscillations of diffraction patterns obtained by the method of fast reflected electron diffraction during the epitaxial growth of Si on a Si(100) substrate. The dependence of the nature of oscillations of the intensity of diffract...
| Published in: | Двадцатая Всероссийская конференция студенческих научно-исследовательских инкубаторов, г. Томск, 2–5 мая 2023 г. С. 162-163 |
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| Format: | Book Chapter |
| Language: | English |
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| Online Access: | http://vital.lib.tsu.ru/vital/access/manager/Repository/koha:001146789 |
| Summary: | This paper presents a study of the bimodal character of the intensity oscillations of diffraction patterns obtained by the method of fast reflected electron diffraction during the epitaxial growth of Si on a Si(100) substrate. The dependence of the nature of oscillations of the intensity of diffraction patterns during the epitaxial growth of Si on Si(100) is shown in a wide temperature range of the substrate. |
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| Bibliography: | Библиогр.: 3 назв. |
| ISBN: | 9785936296987 |