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|a Sokolov, А. S.
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|a Investigation of the bimodal character of RHEED intensity oscillations during homoepitaxial growth of Si/Si(100)
|c А. S. Sokolov, O. I. Kukenov
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|a Текст
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|a электронный
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|a Библиогр.: 3 назв.
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|a This paper presents a study of the bimodal character of the intensity oscillations of diffraction patterns obtained by the method of fast reflected electron diffraction during the epitaxial growth of Si on a Si(100) substrate. The dependence of the nature of oscillations of the intensity of diffraction patterns during the epitaxial growth of Si on Si(100) is shown in a wide temperature range of the substrate.
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|a молекулярно-лучевая эпитаксия
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|a высокоскоростная дифракция отраженных электронов
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|a кремний
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|a бимодальность
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|a статьи в сборниках
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|a Kukenov, Olzhas I.
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|t Двадцатая Всероссийская конференция студенческих научно-исследовательских инкубаторов, г. Томск, 2–5 мая 2023 г.
|d Томск, 2023
|g С. 162-163
|z 9785936296987
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|a RU-ToGU
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|u http://vital.lib.tsu.ru/vital/access/manager/Repository/koha:001146789
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