Gas−sensing properties of In2O3−Ga2O3 alloy films

Gas−sensing properties of In2O3−Ga2O3 alloy films

The effect of the gaseous medium composition on the electrically conductive properties of In2O3−Ga2O3 films obtained by halide vapor phase epitaxy has been studied. In the temperature range of 100−550◦C, the In2O3−Ga2O3 films exhibit high sensitivity to H2, NH3 and possess hyphen performance and low...

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Bibliographic Details
Published in:Technical physics letters Vol. 48, № 7. P. 76-79
Other Authors: Nikolaev, Vladimir I., Almaev, Aleksei V., Kushnarev, Bogdan O., Pechnikov, Aleksei I., Stepanov, Sergey I., Chikiryaka, Andrei V., Timashov, R. B., Scheglov, Mikhail P., Butenko, Pavel N., Chernikov, Evgeniy V.
Format: Article
Language:English
Subjects:
парофазная эпитаксия
газовая чувствительность
статьи в журналах
Online Access:https://vital.lib.tsu.ru/vital/access/manager/Repository/koha:001157044
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Summary:The effect of the gaseous medium composition on the electrically conductive properties of In2O3−Ga2O3 films obtained by halide vapor phase epitaxy has been studied. In the temperature range of 100−550◦C, the In2O3−Ga2O3 films exhibit high sensitivity to H2, NH3 and possess hyphen performance and low base resistance. A qualitative mechanism for the sensitivity of In2O3−Ga2O3 films to gases is proposed.
Bibliography:Библиогр.: 25 назв.
ISSN:1063-7850

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