Synthesis and Bridgman growth of Ga2S3 crystals
In this work, Ga2S3 crystals were obtained by vertical Bridgman method. The presence of cracks in the grown crystals was interpreted as a result of phase transition into monoclinic structure during cooling. This suggests the use of another approach for the growth of high quality samples, e.g. chemic...
| Published in: | Key engineering materials Vol. 683. P. 71-76 |
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| Other Authors: | , , , , , |
| Format: | Article |
| Language: | English |
| Subjects: | |
| Online Access: | https://vital.lib.tsu.ru/vital/access/manager/Repository/koha:001159197 Перейти в каталог НБ ТГУ |
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| 024 | 7 | |a 10.4028/www.scientific.net/KEM.683.71 |2 doi | |
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| 040 | |a RU-ToGU |b rus |c RU-ToGU | ||
| 245 | 1 | 0 | |a Synthesis and Bridgman growth of Ga2S3 crystals |c K. A. Kokh, I. N. Lapin, V. A. Svetlichny [et al.] |
| 336 | |a Текст | ||
| 337 | |a электронный | ||
| 504 | |a Библиогр.: 12 назв. | ||
| 506 | |a Ограниченный доступ | ||
| 520 | 3 | |a In this work, Ga2S3 crystals were obtained by vertical Bridgman method. The presence of cracks in the grown crystals was interpreted as a result of phase transition into monoclinic structure during cooling. This suggests the use of another approach for the growth of high quality samples, e.g. chemical transport method or melt-solution method. Maximal transparency range of 0.48-22.5 µm and at least 10 times higher damage threshold to that for GaSe render anisotropic Ga2S3 crystal among the most prospective crystals for nonlinear applications. | |
| 653 | |a полупроводники | ||
| 653 | |a Бриджмена метод | ||
| 653 | |a моноклинная фаза | ||
| 653 | |a кристаллизация | ||
| 655 | 4 | |a статьи в журналах | |
| 700 | 1 | |a Kokh, Konstantin A. |9 89168 | |
| 700 | 1 | |a Lapin, Ivan N. |9 100086 | |
| 700 | 1 | |a Svetlichnyi, Valerii A. |9 562988 | |
| 700 | 1 | |a Galiyeva, Perizat |9 990703 | |
| 700 | 1 | |a Bakhadur, Askar |9 990704 | |
| 700 | 1 | |a Andreev, Yury M. |d 1946- |9 564682 | |
| 773 | 0 | |t Key engineering materials |d 2016 |g Vol. 683. P. 71-76 |x 1013-9826 | |
| 852 | 4 | |a RU-ToGU | |
| 856 | 4 | |u https://vital.lib.tsu.ru/vital/access/manager/Repository/koha:001159197 | |
| 856 | |y Перейти в каталог НБ ТГУ |u https://koha.lib.tsu.ru/cgi-bin/koha/opac-detail.pl?biblionumber=1159197 | ||
| 908 | |a статья | ||
| 039 | |b 100 | ||
| 999 | |c 1159197 |d 1159197 | ||