Halogen adsorption at an As-stabilized β2-GaAs (001)-(2×4) surface
Halogen (F, Cl, Br, and I) adsorption at an As-stabilized GaAs (001) surface with the β2-(2 × 4) reconstruction is studied using the plane-wave projected-augmented wave method. The effect of halogens on the structural and electronic characteristics of the semiconductor surface is analyzed. The T2�...
| Published in: | Semiconductors Vol. 50, № 2. P. 171-179 |
|---|---|
| Main Author: | |
| Other Authors: | |
| Format: | Article |
| Language: | English |
| Subjects: | |
| Online Access: | http://vital.lib.tsu.ru/vital/access/manager/Repository/vtls:000569122 Перейти в каталог НБ ТГУ |