Photoelectric characteristics of metal-Ga2O3-GaAs structures
We investigate the effect of thermal annealing in argon and of oxygen plasma processing on the photoelectric properties of GaAs-Ga2O3-Me structures. Gallium-oxide films are fabricated by photostimulated electrochemical oxidation of epitaxial gallium-arsenide layers with n-type conductivity. The as-d...
| Published in: | Semiconductors Vol. 49, № 3. P. 345-351 |
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| Corporate Author: | |
| Other Authors: | , , , , |
| Format: | Article |
| Language: | English |
| Subjects: | |
| Online Access: | http://vital.lib.tsu.ru/vital/access/manager/Repository/vtls:000532349 Перейти в каталог НБ ТГУ |