Electrically tunable in-plane anisotropic magnetoresistance in topological insulator BiSbTeSe2 nanodevices

We report tunable in-plane anisotropic magnetoresistance (AMR) in nanodevices based on topological insulator BiSbTeSe2 (BSTS) nanoflakes by electric gating. The AMR can be changed continuously from negative to positive when the Fermi level is manipulated to cross the Dirac point by an applied gate e...

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Bibliographic Details

Published in:	Nano letters Vol. 15, № 3. P. 2061-2066
Corporate Author:	Томский государственный университет Физический факультет Кафедра физики металлов
Other Authors:	Sulaev, Azat, Shen, Shun-Qing, Cho, Soon Khuen, Zhu, Wei Guang, Feng, Yuan Ping, Eremeev, Sergey V., Kawazoe, Yoshiyuki, Shen, Lei, Wang, Lan, Zeng, Minggang
Format:	Article
Language:	English
Subjects:	топологические изоляторы магнитные поля магнетосопротивление анизотропное статьи в журналах
Online Access:	http://vital.lib.tsu.ru/vital/access/manager/Repository/vtls:000525709 Перейти в каталог НБ ТГУ