Electrically tunable in-plane anisotropic magnetoresistance in topological insulator BiSbTeSe2 nanodevices
We report tunable in-plane anisotropic magnetoresistance (AMR) in nanodevices based on topological insulator BiSbTeSe2 (BSTS) nanoflakes by electric gating. The AMR can be changed continuously from negative to positive when the Fermi level is manipulated to cross the Dirac point by an applied gate e...
| Published in: | Nano letters Vol. 15, № 3. P. 2061-2066 |
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| Corporate Author: | |
| Other Authors: | , , , , , , , , , |
| Format: | Article |
| Language: | English |
| Subjects: | |
| Online Access: | http://vital.lib.tsu.ru/vital/access/manager/Repository/vtls:000525709 Перейти в каталог НБ ТГУ |
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| 008 | 181202|2015 xxu s a eng dd | ||
| 024 | 7 | |a 10.1021/nl504956s |2 doi | |
| 035 | |a to000525709 | ||
| 039 | 9 | |a 201812021546 |c 201611150819 |d cat202 |c 201610270945 |d cat202 |c 201607291108 |d cat202 |y 201603021003 |z Александр Эльверович Гилязов | |
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| 245 | 1 | 0 | |a Electrically tunable in-plane anisotropic magnetoresistance in topological insulator BiSbTeSe2 nanodevices |c A. Sulaev, M. Zeng, S. Shen [et.al.] |
| 520 | 3 | |a We report tunable in-plane anisotropic magnetoresistance (AMR) in nanodevices based on topological insulator BiSbTeSe2 (BSTS) nanoflakes by electric gating. The AMR can be changed continuously from negative to positive when the Fermi level is manipulated to cross the Dirac point by an applied gate electric field. We also discuss effects of the gate electric field, current density, and magnetic field on the in-plane AMR with a simple physical model, which is based on the in-plane magnetic field induced shift of the spin-momentum locked topological two surface states that are coupled through side surfaces and bulk weak antilocalization (WAL). The large, tunable and bipolar inplane AMR in BSTS devices provides the possibility of fabricating more sensitive logic and magnetic random access memory AMR devices. | |
| 653 | |a топологические изоляторы | ||
| 653 | |a магнитные поля | ||
| 653 | |a магнетосопротивление анизотропное | ||
| 655 | 4 | |a статьи в журналах |9 879358 | |
| 700 | 1 | |a Sulaev, Azat |9 438072 | |
| 700 | 1 | |a Shen, Shun-Qing |9 412626 | |
| 700 | 1 | |a Cho, Soon Khuen |9 438073 | |
| 700 | 1 | |a Zhu, Wei Guang |9 438074 | |
| 700 | 1 | |a Feng, Yuan Ping |9 438075 | |
| 700 | 1 | |a Eremeev, Sergey V. |9 89116 | |
| 700 | 1 | |a Kawazoe, Yoshiyuki |9 329916 | |
| 700 | 1 | |a Shen, Lei |9 438076 | |
| 700 | 1 | |a Wang, Lan |9 438077 | |
| 700 | 1 | |a Zeng, Minggang |9 438078 | |
| 710 | 2 | |a Томский государственный университет |b Физический факультет |b Кафедра физики металлов |9 82999 | |
| 773 | 0 | |t Nano letters |d 2015 |g Vol. 15, № 3. P. 2061-2066 |x 1530-6984 | |
| 852 | 4 | |a RU-ToGU | |
| 856 | 7 | |u http://vital.lib.tsu.ru/vital/access/manager/Repository/vtls:000525709 | |
| 856 | |y Перейти в каталог НБ ТГУ |u https://koha.lib.tsu.ru/cgi-bin/koha/opac-detail.pl?biblionumber=387411 | ||
| 908 | |a статья | ||
| 999 | |c 387411 |d 387411 | ||