Epitaxial B-Graphene: large-scale growth and atomic structure

Embedding foreign atoms or molecules in graphene has become the key approach in its functionalization and is intensively used for tuning its structural and electronic properties. Here, we present an ecient method based on chemical vapor deposition for large scale growth of boron-doped graphene (B-gr...

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Bibliographic Details

Published in:	ACS Nano Vol. 9. P. 7314-7322
Corporate Author:	Томский государственный университет Физический факультет Кафедра физики металлов
Other Authors:	Usachov, Dmitry Yu, Petukhov, Anatoly E., Vilkov, Oleg Yu, Rybkin, Artem G., Otrokov, Mikhail M., Arnau, Andrés, Chulkov, Evgueni V., Yashina, Lada V., Farjam, Mani, Fedorov, Alexander V., Adamchuk, Vera K., Senkovskiy, Boris V., Laubschat, Clemens, Vyalikh, Denis V.
Format:	Article
Language:	English
Subjects:	графены бор электронная структура статьи в журналах
Online Access:	http://vital.lib.tsu.ru/vital/access/manager/Repository/vtls:000526168 Перейти в каталог НБ ТГУ