Epitaxial B-Graphene: large-scale growth and atomic structure
Embedding foreign atoms or molecules in graphene has become the key approach in its functionalization and is intensively used for tuning its structural and electronic properties. Here, we present an ecient method based on chemical vapor deposition for large scale growth of boron-doped graphene (B-gr...
Published in: | ACS Nano Vol. 9. P. 7314-7322 |
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Corporate Author: | Томский государственный университет Физический факультет Кафедра физики металлов |
Other Authors: | Usachov, Dmitry Yu, Petukhov, Anatoly E., Vilkov, Oleg Yu, Rybkin, Artem G., Otrokov, Mikhail M., Arnau, Andrés, Chulkov, Evgueni V., Yashina, Lada V., Farjam, Mani, Fedorov, Alexander V., Adamchuk, Vera K., Senkovskiy, Boris V., Laubschat, Clemens, Vyalikh, Denis V. |
Format: | Article |
Language: | English |
Subjects: | |
Online Access: | http://vital.lib.tsu.ru/vital/access/manager/Repository/vtls:000526168 Перейти в каталог НБ ТГУ |
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