Low-temperature transport of charge carriers in InGaN/GaN multiple quantum well light-emitting diodes

The results of experimental investigation of forward current-voltage characteristics of InGaN/GaN multiple quantum well light-emitting diodes are presented. A new model for explaining the complex current dependence on voltage is proposed. The model is based on the assumption of space charge limited...

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Bibliographic Details

Published in:	Physica status solidi A Vol. 212, № 5. P. 930-934
Main Author:	Prudaev, Ilya A.
Corporate Author:	Томский государственный университет Радиофизический факультет Научные подразделения РФФ
Other Authors:	Tolbanov, Oleg P., Khludkov, Stanislav S
Format:	Article
Language:	English
Subjects:	нитрид индия-галлия нитрид галлия вольт-амперные характеристики светоизлучающие диоды статьи в журналах
Online Access:	http://vital.lib.tsu.ru/vital/access/manager/Repository/vtls:000529688 Перейти в каталог НБ ТГУ