Positronics of radiation-induced effects in chalcogenide glassy semiconductors

Positronics of radiation-induced effects in chalcogenide glassy semiconductors

Using As2S3 and AsS2 glasses as an example, the principal possibility of using positron annihilation spectroscopy methods for studying the evolution of the free volume of hollow nanoobjects in chalcogenide glassy semiconductors exposed to radiation is shown. The results obtained by measurements of t...

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Bibliographic Details
Published in:Semiconductors Vol. 49, № 3. P. 298-304
Corporate Author: Томский государственный университет Химический факультет Кафедра неорганической химии
Other Authors: Shpotyuk, O., Shpotyuk, M., Ingram, A., Szatanik, R., Kozyukhin, Sergey A.
Format: Article
Language:English
Subjects:
позитронная аннигиляционная спектроскопия
полупроводники
статьи в журналах
Online Access:http://vital.lib.tsu.ru/vital/access/manager/Repository/vtls:000532370
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