Positronics of radiation-induced effects in chalcogenide glassy semiconductors
Using As2S3 and AsS2 glasses as an example, the principal possibility of using positron annihilation spectroscopy methods for studying the evolution of the free volume of hollow nanoobjects in chalcogenide glassy semiconductors exposed to radiation is shown. The results obtained by measurements of t...
| Published in: | Semiconductors Vol. 49, № 3. P. 298-304 |
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| Corporate Author: | |
| Other Authors: | , , , , |
| Format: | Article |
| Language: | English |
| Subjects: | |
| Online Access: | http://vital.lib.tsu.ru/vital/access/manager/Repository/vtls:000532370 Перейти в каталог НБ ТГУ |