Electronic properties of GaSe, InSe, GaS and GaTe layered semiconductors: charge neutrality level and interface barrier heights

Density functional theory calculations have been applied to study the structural and electronic properties of layered epsilon-GaSe, γ-InSe, β-GaS and GaTe compounds. The optimized lattice parameters have been obtained using vdW-DF2-C09 exchange-correlation functional, which is able to describe dispe...

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Bibliographic Details

Published in:	Semiconductor science and technology Vol. 30, № 11. P. 115019 (1-9)
Main Author:	Brudnyi, Valentin N.
Other Authors:	Sarkisov, Sergey Yu, Kosobutsky, Alexey V.
Format:	Article
Language:	English
Subjects:	селенид галлия селенид индия сульфид галлия теллурид галлия полупроводники электронные свойства статьи в журналах
Online Access:	http://vital.lib.tsu.ru/vital/access/manager/Repository/vtls:000548758 Перейти в каталог НБ ТГУ