Model of step propagation and step bunching at the sidewalls of nanowires
Radial growth of vertically aligned nanowires involves formation and propagation of monoatomic steps at atomically smooth nanowire sidewalls. Here we study the step dynamics with a step flow model taking into account the presence of a strong sink for adatoms at top of the nanowire and adatom exchang...
Опубликовано в: : | Journal of crystal growth Vol. 427. P. 60-66 |
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Главный автор: | |
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Формат: | Статья в журнале |
Язык: | English |
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Online-ссылка: | http://vital.lib.tsu.ru/vital/access/manager/Repository/vtls:000581434 Перейти в каталог НБ ТГУ |