Transient processes in the GaAs-based microwave-pin-diodes
The results of studies of transient characteristics of microwave-pin-diodes based on gallium arsenide are presented. It is shown that in these diodes, a transient process occurs in two stages resulting in a complicated pulse shape during the diode switching. The dependences of the effective lifetime...
| Published in: | Russian physics journal Vol. 57, № 12. P. 1627-1633 |
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| Main Author: | |
| Other Authors: | , |
| Format: | Article |
| Language: | English |
| Subjects: | |
| Online Access: | http://vital.lib.tsu.ru/vital/access/manager/Repository/vtls:000551927 Перейти в каталог НБ ТГУ |