Investigation of surface potential in the V-defect region of MBE CdxHg1−xTe film
Atomic-force microscopy is used to investigate the distribution of the contact-potential difference (surface potential) in Cd x Hg1 − x Te epitaxial films grown by molecular-beam epitaxy. Modification of the solid-solution composition near the V-defect results in a variation in the contact-potential...
| Опубликовано в: : | Semiconductors Vol. 49, № 3. P. 309-312 |
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| Формат: | Статья в журнале |
| Язык: | English |
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| Online-ссылка: | http://vital.lib.tsu.ru/vital/access/manager/Repository/vtls:000577693 Перейти в каталог НБ ТГУ |