Formation of Ge/Si nanoscale structures at different growth conditions by molecular beam epitaxy

Nanoscale structures such as quantum wells, quantum wires, quantum dots and quantum fortresses are obtained by molecular beam epitaxy (MBE) technique. Various surface morphology was controlled by changing of growth parameters. Formation of Ge quantum dots in hut-island form is observed during deposi...

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Bibliographic Details

Published in:	Journal of nanoelectronics and optoelectronics Vol. 10, № 1. P. 99-103
Other Authors:	Timofeev, V. A., Zinovyev, V. A., Teys, Sergey A., Pchelyakov, Oleg P., Nikiforov, Alexander I.
Format:	Article
Language:	English
Subjects:	наноразмерные структуры молекулярно-лучевая эпитаксия статьи в журналах
Online Access:	http://vital.lib.tsu.ru/vital/access/manager/Repository/vtls:000577713 Перейти в каталог НБ ТГУ