A method for determining the ambipolar diffusion length and carrier lifetime in GaAs p-i-n diodes
It was determined that the forward loss resistance as a function of the radius of the active region of typical microwave p-i-n diodes depends on the ratio of the square of the ambipolar-diffusion length to the square of the radius of the diode active region. Based on this regularity, a method was de...
| Published in: | Instruments and experimental techniques Vol. 58, № 2. P. 107-110 |
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| Format: | Article |
| Language: | English |
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| Online Access: | http://vital.lib.tsu.ru/vital/access/manager/Repository/vtls:000582409 Перейти в каталог НБ ТГУ |