Characterization of 4 inch GaAs:Cr wafers
Producing of large area matrix detectors based on semiconductor materials with high atomic number suitable for the registration of the synchrotron radiation of high intensity in the photon energy range 20-90 keV is a relevant technological challenge of our time. This will develop a fundamentally new...
| Опубликовано в: : | Journal of instrumentation : electronic journal Vol. 12, № 1. P. C01063 (1-7) |
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| Другие авторы: | , , , , , , , , , |
| Формат: | Статья в журнале |
| Язык: | English |
| Предметы: | |
| Online-ссылка: | http://vital.lib.tsu.ru/vital/access/manager/Repository/vtls:000616083 Перейти в каталог НБ ТГУ |