Conduction mechanism of metal-TiO2-Si structures

The conduction model has been proposed for the metal-TiO2-Si (MIS) structures. Rutile films have been prepared on Si substrates by magnetron sputtering of TiO2 target and annealing in the air at temperatures T = 800 and 1050 K. The current-voltage (CVC) and capacitance-voltage characteristics of the...

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Bibliographic Details

Published in:	Chinese journal of physics Vol. 55, № 1. P. 59-63
Other Authors:	Kalygina, Vera M., Prudaev, Ilya A., Tolbanov, Oleg P., Atuchin, Victor V., Egorova, I. S.
Format:	Article
Language:	English
Subjects:	МДП-структуры подложка пространственный заряд диэлектрический слой статьи в журналах
Online Access:	http://vital.lib.tsu.ru/vital/access/manager/Repository/vtls:000629811 Перейти в каталог НБ ТГУ