Conductivity of Ga2O3-GaAs heterojunctions
The effect of annealing in argon at temperatures of Tan = 700-900°C on the I-V characteristics of metal-Ga2O3-GaAs structures is investigated. Samples are prepared by the thermal deposition of Ga2O3 powder onto GaAs wafers with a donor concentration of N d = 2 × 1016 cm-3. To measure theI-V characte...
| Published in: | Semiconductors Vol. 52, № 2. P. 143-149 |
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| Main Author: | |
| Other Authors: | , |
| Format: | Article |
| Language: | English |
| Subjects: | |
| Online Access: | http://vital.lib.tsu.ru/vital/access/manager/Repository/vtls:000634554 Перейти в каталог НБ ТГУ |