Annealing kinetics of radiation defects in boron-implanted p-Hg1-xCdxTe
The results of studying the annealing kinetics of the radiation-induced donor-type defects in boron implanted p-type Hg1−x Cd x Te (MCT) are presented. The annealing kinetics of the radiation donor centers depend significantly on the dose of B+ ions, that is on the initial level of structural defect...
| Published in: | Semiconductor science and technology Vol. 33, № 6. P. 065009 (1-8) |
|---|---|
| Main Author: | |
| Other Authors: | |
| Format: | Article |
| Language: | English |
| Subjects: | |
| Online Access: | http://vital.lib.tsu.ru/vital/access/manager/Repository/vtls:000634053 Перейти в каталог НБ ТГУ |