The mechanism of superfast switching of avalanche S-diodes based on GaAs doped with Cr and Fe

The results of theoretical and experimental investigation of charge carrier transport in avalanche S-diodes based on π-ν-n and π-n structures are presented. High-ohmic layers of the diodes were made by diffusion of deep chromium and iron acceptors into n-GaAs. It is shown that recharge of the deep a...

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Bibliographic Details

Published in:	IEEE transactions on electron devices Vol. 65, № 8. P. 3339-3344
Other Authors:	Oleinik, Vladimir L., Smirnova, Tatyana E., Kopyev, Viktor V., Verkholetov, Maksim G., Balzovsky, Evgeny V., Tolbanov, Oleg P., Prudaev, Ilya A.
Format:	Article
Language:	English
Subjects:	лавинные S-диоды полупроводниковые переключатели лавинный пробой Ганна эффект статьи в журналах
Online Access:	http://vital.lib.tsu.ru/vital/access/manager/Repository/vtls:000651299 Перейти в каталог НБ ТГУ