Properties of gallium oxide films obtained by HF-magnetron sputtering
The results of an analysis of structure and phase composition of gallium oxide films obtained by HF-magnetron sputtering are presented. It is shown that in the interval 290-350 K, the increase in the film conductivity with increasing temperature is due to the excitation of electrons from a local lev...
| Published in: | Russian physics journal Vol. 60, № 11. P. 1911-1916 |
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| Other Authors: | , , , , , |
| Format: | Article |
| Language: | English |
| Subjects: | |
| Online Access: | http://vital.lib.tsu.ru/vital/access/manager/Repository/vtls:000651715 Перейти в каталог НБ ТГУ |