Investigation of dual-ion beam sputter-instigated plasmon generation in TCOs: a case study of GZO

The use of the high free-electron concentration in heavily doped semiconductor enables the realization of plasmons. We report a novel approach to generate plasmons in Ga:ZnO (GZO) thin films in the wide spectral range of ∼1.87-10.04 eV. In the grown GZO thin films, dual-ion beam sputtering (DIBS) in...

Full description

Bibliographic Details

Published in:	ACS Applied materials & interfaces Vol. 10, № 6. P. 5464-5474
Other Authors:	Sengar, Brajendra S., Awasthi, Vishnu, Kumar, Amitesh, Singh, Rohit, Kumar, Shailendra, Mukherjee, C., Atuchin, Victor V., Mukherjee, Shaibal, Garg, Vivek
Format:	Article
Language:	English
Subjects:	плазмоны тонкие пленки нанокластеры ультрафиолетовая фотоэлектронная спектроскопия статьи в журналах
Online Access:	http://vital.lib.tsu.ru/vital/access/manager/Repository/vtls:000658490 Перейти в каталог НБ ТГУ