Morphology, structure, and optical properties of semiconductor films with GeSiSn nanoislands and strained layers

The dependences of the two-dimensional to three-dimensional growth (2D-3D) critical transition thickness on the composition for GeSiSn films with a fixed Ge content and Sn content from 0 to 16% at the growth temperature of 150 °С have been obtained. The phase diagrams of the superstructure change du...

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Bibliographic Details

Published in:	Nanoscale research letters Vol. 13. P. 29 (1-8)
Other Authors:	Nikiforov, Alexander I., Tuktamyshev, Artur R., Mashanov, Vladimir I., Yesin, Michail Yu, Bloshkin, Aleksei A., Timofeev, Vyacheslav F.
Format:	Article
Language:	English
Subjects:	фотолюминесценция оптические свойства полупроводниковые пленки эпитаксия сканирующая туннельная микроскопия дифракция статьи в журналах
Online Access:	http://vital.lib.tsu.ru/vital/access/manager/Repository/vtls:000659943 Перейти в каталог НБ ТГУ