Atomic-scale mechanisms of defect- and light-induced oxidation and degradation of InSe
Layered indium selenide (InSe), a new two-dimensional (2D) material with a hexagonal structure and semiconducting characteristics, is gaining increasing attention owing to its intriguing electronic properties. Here, by using first-principles calculations, we reveal that perfect InSe possesses high c...
| Опубликовано в: : | Journal of materials chemistry C Vol. 6, № 3. P. 518-525 |
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| Другие авторы: | , , , , |
| Формат: | Статья в журнале |
| Язык: | English |
| Предметы: | |
| Online-ссылка: | http://vital.lib.tsu.ru/vital/access/manager/Repository/vtls:000789029 Перейти в каталог НБ ТГУ |