Interface studies in HgTe/HgCdTe quantum wells

Interface studies in HgTe/HgCdTe quantum wells

Transmission electron microscopy (TEM) is used for the study of interfaces in two HgTe/HgCdTe single quantum-well (QW) structures grown by molecular beam epitaxy on GaAs substrates. The studies are conducted in bright-field and scanning/high-angle annular dark field modes. The effect of the growth m...

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Bibliographic Details
Published in:Physica status solidi B Vol. 257, № 5. P. 1900598 (1-5)
Other Authors: Shvets, Vasiliy, Ikusov, Danil, Uzhakov, Ivan, Dvoretsky, Sergei A., Mynbaev, Karim D., Dluzewski, Piotr, Morgiel, Jerzy, Świątek, Zbigniew, Bonchyk, A. Yu, Mikhailov, Nikolay N., Izhnin, Igor I.
Format: Article
Language:English
Subjects:
квантовые ямы
границы раздела
просвечивающая электронная микроскопия
статьи в журналах
Online Access:http://vital.lib.tsu.ru/vital/access/manager/Repository/vtls:000792276
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Summary:Transmission electron microscopy (TEM) is used for the study of interfaces in two HgTe/HgCdTe single quantum-well (QW) structures grown by molecular beam epitaxy on GaAs substrates. The studies are conducted in bright-field and scanning/high-angle annular dark field modes. The effect of the growth mode on the sharpness of interfaces in the QWs is investigated. Effective in situ ellipsometric control over chemical composition and thickness of the layers constituting the QW structures is demonstrated.
ISSN:0370-1972

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