Effect of Sn for the dislocation-free SiSn nanostructure formation on the vapor-liquid-crystal mechanism

Effect of Sn for the dislocation-free SiSn nanostructure formation on the vapor-liquid-crystal mechanism

Structures with tin-rich island arrays on silicon pedestals were obtained by molecular beam epitaxy using Sn as a catalyst for the growth of nanostructures. A tin island array was used further to study the growth of nanostructures in the process of Si deposition on the surface with Sn islands. It wa...

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Bibliographic Details
Published in:AIP Advances Vol. 10, № 1. P. 015309-1-015309-7
Other Authors: Mashanov, Vladimir I., Nikiforov, Alexander I., Skvortsov, Ilya, Gavrilova, Tatiana A., Gulyaev, Dmitry V., Gutakovskii, Anton K., Chetyrin, Igor A., Timofeev, Vyacheslav F.
Format: Article
Language:Russian
Subjects:
фотоэлектронная спектроскопия
энергодисперсионная рентгеновская спектроскопия
просвечивающая электронная микроскопия
олово
бездислокационные наноструктуры
статьи в журналах
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