Fermi level pinning and hydrostatic pressure effect in electron irradiated GaSb

The effect of 2 MeV electron bombardment up to total electron dose of 1×1019cm−2 on the electrical and piezo resistive properties of n- and p-type GaSb crystals was studied. The electron irradiation leads to saturation of the hole concentration at about 5×1018cm−3 as a result of Fermi level pinnin...

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Bibliographic Details

Published in:	Semiconductor science and technology Vol. 35, № 8. P. 085021 (1-5)
Main Author:	Brudnyi, Valentin N.
Other Authors:	Kamenskaya, I. V., Brudnyi, P. A.
Format:	Article
Language:	English
Subjects:	уровень зарядовой нейтральности радиационные эффекты пьезосопротивление антимонид галлия статьи в журналах
Online Access:	http://vital.lib.tsu.ru/vital/access/manager/Repository/vtls:000794659 Перейти в каталог НБ ТГУ