Fermi level pinning and hydrostatic pressure effect in electron irradiated GaSb
The effect of 2 MeV electron bombardment up to total electron dose of 1×1019cm−2 on the electrical and piezo resistive properties of n- and p-type GaSb crystals was studied. The electron irradiation leads to saturation of the hole concentration at about 5×1018cm−3 as a result of Fermi level pinnin...
| Published in: | Semiconductor science and technology Vol. 35, № 8. P. 085021 (1-5) |
|---|---|
| Main Author: | |
| Other Authors: | , |
| Format: | Article |
| Language: | English |
| Subjects: | |
| Online Access: | http://vital.lib.tsu.ru/vital/access/manager/Repository/vtls:000794659 Перейти в каталог НБ ТГУ |
| Summary: | The effect of 2 MeV electron bombardment up to total electron dose of 1×1019cm−2 on the electrical and piezo resistive properties of n- and p-type GaSb crystals was studied. The electron irradiation leads to saturation of the hole concentration at about 5×1018cm−3 as a result of Fermi level pinning near the valence band top in all irradiated samples. With this in mind, the calculated data on the energy position of the charge neutrality level in GaSb were analyzed. The pressure coefficient of resistivity αρ = ∂(lnρ)/∂P was measured as a function of Fermi level position in the electron irradiated samples. Isochronal annealing of radiation-induced defects was investigated in the temperature range of 20-400 ◦C. |
|---|---|
| Bibliography: | Библиогр.: 30 назв. |
| ISSN: | 0268-1242 |