Atomic and electronic structure of bismuth-bilayer-terminated Bi2Se3(0001) prepared by atomic hydrogen etching

A bilayer of bismuth is recognized as a prototype two-dimensional topological insulator. Here we present a simple and well reproducible top-down approach to prepare a flat and well ordered bismuth bilayer with a lateral size of several hundred nanometers on Bi2Se3(0001). Using scanning tunneling mic...

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Bibliographic Details

Published in:	Physical Review B Vol. 91, № 20. P. 205430-1-205430-7
Other Authors:	Shokri, Roozbeh, Roy, Sumalay, Mohseni, Katayoon, Ernst, Arthur, Otrokov, Mikhail M., Chulkov, Evgueni V., Kirschner, Jürgen, Meyerheim, Holger L.
Format:	Article
Language:	English
Subjects:	селенид висмута топологические изоляторы атомная структура электронная структура статьи в журналах
Online Access:	http://vital.lib.tsu.ru/vital/access/manager/Repository/vtls:000553151 Перейти в каталог НБ ТГУ