Atomic and electronic structure of bismuth-bilayer-terminated Bi2Se3(0001) prepared by atomic hydrogen etching

A bilayer of bismuth is recognized as a prototype two-dimensional topological insulator. Here we present a simple and well reproducible top-down approach to prepare a flat and well ordered bismuth bilayer with a lateral size of several hundred nanometers on Bi2Se3(0001). Using scanning tunneling mic...

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Bibliographic Details
Published in:Physical Review B Vol. 91, № 20. P. 205430-1-205430-7
Other Authors: Shokri, Roozbeh, Roy, Sumalay, Mohseni, Katayoon, Ernst, Arthur, Otrokov, Mikhail M., Chulkov, Evgueni V., Kirschner, Jürgen, Meyerheim, Holger L.
Format: Article
Language:English
Subjects:
Online Access:http://vital.lib.tsu.ru/vital/access/manager/Repository/vtls:000553151
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245 1 0 |a Atomic and electronic structure of bismuth-bilayer-terminated Bi2Se3(0001) prepared by atomic hydrogen etching  |c R. Shokri, H. L. Meyerheim, S. Roy [et.al.] 
504 |a Библиогр.: 41 назв. 
520 3 |a A bilayer of bismuth is recognized as a prototype two-dimensional topological insulator. Here we present a simple and well reproducible top-down approach to prepare a flat and well ordered bismuth bilayer with a lateral size of several hundred nanometers on Bi2Se3(0001). Using scanning tunneling microscopy, surface x-ray diffraction, and Auger electron spectroscopy we show that exposure of Bi2Se3(0001) to atomic hydrogen completely removes selenium from the top quintuple layer. The band structure of the system, calculated from first principles for the experimentally derived atomic structure, is in excellent agreement with recent photoemission data. Our results open interesting perspectives for the study of topological insulators in general. 
653 |a селенид висмута 
653 |a топологические изоляторы 
653 |a атомная структура 
653 |a электронная структура 
655 4 |a статьи в журналах  |9 879358 
700 1 |a Shokri, Roozbeh  |9 148309 
700 1 |a Roy, Sumalay  |9 148310 
700 1 |a Mohseni, Katayoon  |9 148311 
700 1 |a Ernst, Arthur  |9 148312 
700 1 |a Otrokov, Mikhail M.  |9 99558 
700 1 |a Chulkov, Evgueni V.  |9 89119 
700 1 |a Kirschner, Jürgen  |9 148313 
700 1 |a Meyerheim, Holger L.  |9 148314 
773 0 |t Physical Review B  |d 2015  |g Vol. 91, № 20. P. 205430-1-205430-7  |x 1098-0121 
852 4 |a RU-ToGU 
856 7 |u http://vital.lib.tsu.ru/vital/access/manager/Repository/vtls:000553151 
856 |y Перейти в каталог НБ ТГУ  |u https://koha.lib.tsu.ru/cgi-bin/koha/opac-detail.pl?biblionumber=48263 
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