Atomic and electronic structure of bismuth-bilayer-terminated Bi2Se3(0001) prepared by atomic hydrogen etching
A bilayer of bismuth is recognized as a prototype two-dimensional topological insulator. Here we present a simple and well reproducible top-down approach to prepare a flat and well ordered bismuth bilayer with a lateral size of several hundred nanometers on Bi2Se3(0001). Using scanning tunneling mic...
| Published in: | Physical Review B Vol. 91, № 20. P. 205430-1-205430-7 |
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| Other Authors: | , , , , , , , |
| Format: | Article |
| Language: | English |
| Subjects: | |
| Online Access: | http://vital.lib.tsu.ru/vital/access/manager/Repository/vtls:000553151 Перейти в каталог НБ ТГУ |