Atomic and electronic structure of bismuth-bilayer-terminated Bi2Se3(0001) prepared by atomic hydrogen etching
A bilayer of bismuth is recognized as a prototype two-dimensional topological insulator. Here we present a simple and well reproducible top-down approach to prepare a flat and well ordered bismuth bilayer with a lateral size of several hundred nanometers on Bi2Se3(0001). Using scanning tunneling mic...
Published in: | Physical Review B Vol. 91, № 20. P. 205430-1-205430-7 |
---|---|
Other Authors: | Shokri, Roozbeh, Roy, Sumalay, Mohseni, Katayoon, Ernst, Arthur, Otrokov, Mikhail M., Chulkov, Evgueni V., Kirschner, Jürgen, Meyerheim, Holger L. |
Format: | Article |
Language: | English |
Subjects: | |
Online Access: | http://vital.lib.tsu.ru/vital/access/manager/Repository/vtls:000553151 Перейти в каталог НБ ТГУ |
Similar Items
- Atomic relaxations at the (0001) surface of Bi2Se3 single crystals and ultrathin films
- Tuning the Dirac point position in Bi2Se3 (0001) via surface carbon doping
- Spin texture of Bi2Se3 thin films in the quantum tunneling limit
- Geometric and electronic structure of the Cs-doped Bi2Se3(0001) surface
- TCNQ physisorption on the topological insulator Bi2Se3