Electrophysical characteristics of Sub-THz diode with Schottky barrier

In the paper, the results of research of the electrophysical and frequency characteristics of semiconductor structure with a Schottky barrier based on n- GaAs are presented. Current-voltage characteristic and frequency characteristic at the range 115-257 GHz are given. The possibility of using such...

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Bibliographic Details

Published in:	2020 21st International conference of young specialists on micro/nanotechnologies and electron devices (EDM) С. 59-63
Main Author:	Moskalenko, Victoriya D.
Other Authors:	Badin, Alexander V., Pidotova, Diana A.
Format:	Book Chapter
Language:	English
Subjects:	Шоттки барьер полупроводниковые структуры детекторы статьи в сборниках
Online Access:	http://vital.lib.tsu.ru/vital/access/manager/Repository/koha:000564029 Перейти в каталог НБ ТГУ