Charge neutrality in epitaxial graphene on 6H-SiC(0001) via nitrogen intercalation
The electronic properties of epitaxial graphene grown on SiC(0001) are known to be impaired relative to those of freestanding graphene. This is due to the formation of a carbon buffer layer between the graphene layers and the substrate, which causes the graphene layers to become strongly n-doped. Ch...
| Published in: | Physical Review B Vol. 92, № 8. P. 081409-1-081409-5 |
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| Other Authors: | , , , |
| Format: | Article |
| Language: | English |
| Subjects: | |
| Online Access: | http://vital.lib.tsu.ru/vital/access/manager/Repository/vtls:000625564 Перейти в каталог НБ ТГУ |