Comment on "Structural, electronic, and optical properties of the C-C complex in bulk silicon from first principles" [J. Appl. Phys. 123, 161421 (2018)]

Recently, Timerkaeva et al. [J. Appl. Phys. 123, 161421 (2018)] reported the results of a first principles study of the di-carbon (CsCi) complex in silicon. The authors have found that CsCi may occur in four configurations labeled A, B, C, and D. The C form is claimed to have the lowest energy of al...

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Bibliographic Details

Published in:	Journal of applied physics Vol. 124, № 8. P. 086101-1-086101-2
Main Author:	Lavrov, E. V.
Format:	Article
Language:	English
Subjects:	структурные свойства электронные свойства оптические свойства объемный кремний статьи в журналах
Online Access:	http://vital.lib.tsu.ru/vital/access/manager/Repository/koha:000722048 Перейти в каталог НБ ТГУ