Formation of double steps on Si (100): effect of permeability of the A-steps
A model of the elementary step motion on a two-domain (100) silicon surface during crystallization from a molecular beam is proposed. The model takes into account the possibility of an adatom transition to an adjacent terrace before incorporation into a kink at the A-step edge (the effect of the A-s...
| Опубликовано в: : | Russian physics journal Vol. 63, № 6. P. 901-906 |
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| Главный автор: | |
| Формат: | Статья в журнале |
| Язык: | English |
| Предметы: | |
| Online-ссылка: | http://vital.lib.tsu.ru/vital/access/manager/Repository/koha:000722988 Перейти в каталог НБ ТГУ |